Samsung Semiconductor no longer supports Internet Explorer. Please try using a different browser


The Perfect Harmony Created by Samsung HBM: Powering the AI Era

In the orchestra of the AI era, high-bandwidth memory (HBM) plays the role of a proficient musician. Similar to how a skilled musician effortlessly performs notes with precision and speed, HBM leverages its large bandwidth capabilities to efficiently process vast amounts of data in AI applications.

In February, 2024, Samsung Electronics announced the development of the 36GB HBM3E 12H (5th generation HBM), the industry’s first 12-stack HBM3E DRAM. This innovative memory solution involves stacking 12 layers of 24Gb DRAM chips using Through-Silicon Via (TSV) technology. HBM3E 12H’s debut last month at the GPU Technology Conference (GTC) 2024, NVIDIA’s annual developer conference, was met with an enthusiastic reception from customers.

Newsroom sat down with Kyungryun Kim, Corporate VP of Product Planning and Jaeyoun Youn, Corporate VP of DRAM Product Development, who are in charge of Samsung’s HBM.

Pioneering the AI memory market since 2016, Samsung has steadily expanded the AI semiconductor ecosystem, leveraging its unmatched technological expertise. With its distinctively competitive technology, Samsung continues to push boundaries and unlock possibilities.