Samsung Electronics Presents Vision for AI Memory and Storage at FMS 2025

Samsung Electronics participated in FMS (Future Memory & Storage) 2025, held from August 5 to 7 at the Santa Clara Convention Center in San Jose, California, where the company outlined its vision for next-generation memory and storage innovation in the AI era.

Now in its 19th year, FMS rebranded last year as Future Memory & Storage to expand its scope to DRAM. The event has established itself as a premier global conference in the semiconductor industry, bringing together experts and companies in artificial intelligence (AI), machine learning (ML), data analytics, and high-performance computing (HPC) to discuss future technology developments.

Continuing its role from last year, Samsung joined the event as an executive premier sponsor.

In a keynote titled “Architecting AI advancement: The future of memory and storage,” Vice president Hwaseok Oh (Head of controller development team) and Master Daihyun Lim (HBM standard development group) addressed the evolution of AI and its implications for memory and storage infrastructure.

Samsung emphasized that AI is evolving from generative AI to agentic AI and eventually to physical AI, and with this transition, the role and structure of memory and storage are undergoing rapid change. The company highlighted that explosive growth in bandwidth and capacity demand, combined with requirements for lower latency and higher efficiency, are driving the need for advanced solutions.

To meet these demands, Samsung is advancing performance and efficiency with next-generation HBM4/4E, while introducing a new paradigm in the form of custom HBM, tailored to meet diverse customer requirements. In addition, the company underscored the importance of CXL (Compute Express Link) based memory expansion, which supplements GPU limitations, enables scalable and cost-efficient infrastructure, and plays a pivotal role in shaping next-generation data center architectures.

In storage, Samsung defined four key requirements for AI infrastructure: high performance, high capacity, thermal control, and security. To address them, the company showcased: the upcoming PM1763 PCIe 6.0 SSD, next-generation cooling technologies such as liquid cooling, confidential SSDs for enhanced data security, and a new tier of storage, Memory Class Storage (Z-NAND), designed to support low-latency, high-performance AI inference.

At its booth, Samsung also hosted 13 mini theater sessions, where company experts presented on topics including CXL, NVMe, latency reduction, and security innovations, drawing significant interest and active participation from engineers and industry professionals.

Samsung further reinforced its market leadership by joining interviews at the NVMe association booth, highlighting its product differentiation and strategy to drive next-generation standards in the AI era.

Notably, the PM1763 PCIe 6.0 SSD was recognized with the FMS best of show award for “Most innovative memory technology”, validating Samsung’s leadership in high-performance enterprise storage.

Through its participation at FMS 2025, Samsung demonstrated its readiness to lead the industry into a new paradigm of AI infrastructure. By sharing its technology roadmap—including HBM4/4E, Custom HBM, CMM-D/DC, and Z-NAND-based Memory Class Storage—Samsung reaffirmed its position as a global leader shaping the future of memory and storage in the AI era.