Inside FMS 2026: Samsung Electronics Showcases the Future of AI Memory
As the AI era accelerates, the global memory industry gathered in Santa Clara, California, for Future of Memory and Storage (FMS) 2026. Held from August 4 to 6, the event brought together industry leaders to discuss the next generation of memory and storage technologies.
At this year’s FMS, Samsung Electronics showcased its vision for AI memory through a keynote, an exhibition and award recognition. Here’s a look at some of the event’s highlights.
Samsung Outlines Its Vision for the AI Era
The event opened with a keynote titled “Driving the Wave of AI Revolution: 3D Innovation in Memory & Storage Architecture,” presented by Jinyeop Lee, Executive Vice President of Flash Product & Technology, and Kyungryun Kim, Vice President of DRAM Product & Technology.
The presentation introduced Samsung’s latest 3D memory architecture and unveiled zHBM, zNAND-O and the industry’s first V10 Bonding Vertical NAND (BV-NAND), highlighting Samsung’s vision for the future of AI memory.
delivered his keynote address on next-generation 3D structures in future memory solutions at FMS 2026
delivered his keynote address on next-generation 3D structures in future memory solutions at FMS 2026
Samsung Booth Showcases an AI Data Center Concept
Throughout the exhibition, the Samsung booth attracted a steady stream of visitors eager to explore the company’s latest innovations.
Covering approximately 66 square meters, the booth featured three exhibition zones: Highlight, Cloud AI and Edge AI, displaying around 30 memory and storage products across DRAM, NAND and enterprise storage.
New 3D Memory Technologies Take Center Stage: zHBM and zNAND-O
The Highlight Zone featured mock-ups of zHBM and zNAND-O, both making their industry debut at FMS.
Samsung engineers explained the products’ architecture, data movement and potential applications while answering questions from visitors and industry professionals.
Advancing Cloud AI Memory: From V10 BV-NAND to HBM5
The Cloud AI Storage Zone featured the industry’s first V10 BV-NAND.
Interactive displays and videos illustrated the product’s cell and peripheral-circuit wafers, chip structure and ultra-high-layer architecture of more than 400 layers, helping visitors better understand the underlying technology.
The Cloud AI Memory Zone highlighted Samsung’s next-generation AI platforms together with HBM4E wafers.
HBM5, featuring Samsung’s new Heat Path Block (HPB) thermal-management technology, was also on display. Side-by-side comparisons of wafer, chip and package structures helped visitors better understand the product’s design and performance advantages.
Bringing AI Processing into Memory: The Arrival of LPDDR5X-PIM
One of the most popular exhibits in the Edge AI Zone was LPDDR5X-PIM. By integrating processing-in-memory (PIM) technology, LPDDR5X-PIM performs certain AI computations directly within memory, reducing data movement and improving computing efficiency for AI workloads.
The technology generated strong interest among industry professionals throughout the exhibition.
An executive from a global AI server company said, “It was impressive to see memory evolving beyond data storage to improve computing efficiency.”
Another visitor commented, “zHBM and LPDDR5X-PIM take different approaches, but it was interesting that both are designed to address bottlenecks in AI systems.”
Samsung Receives FMS Best of Show Award
Samsung Electronics’ innovations were also recognized during the FMS Awards Ceremony on the opening day of the event.
The company received the FMS Best of Show Award for V10 BV-NAND and LPDDR5X-PIM. Jinyeop Lee, Executive Vice President of Flash Product & Technology, and Kyungryun Kim, Vice President of DRAM Product & Technology, accepted the award on behalf of Samsung Electronics.
Following the ceremony, visitors gathered around the award-winning exhibits, where Samsung researchers continued in-depth technical discussions with customers and industry professionals.
Samsung Electronics’ Journey Toward Memory Innovation for the AI Era
FMS 2026 showcased Samsung Electronics’ broader vision for the future of AI memory.
Through its keynote presentation, exhibition and FMS Best of Show Award, the company demonstrated how memory innovations are evolving to support everything from large-scale AI infrastructure to on-device AI experiences. The event also provided an opportunity for customers and industry professionals to exchange ideas on the future of AI computing.
Building on its leadership in memory, foundry and advanced packaging, Samsung Electronics will continue working with customers to drive semiconductor innovation for the AI era.
