Featured Stories

[Video] The World of Nano – V-NAND, Bonding V-NAND: Redefining Storage Architecture

From Storage to AI: NAND’s Evolution for Next-Generation Infrastructure NAND flash has long been a foundational storage technology in devices from USB...

[Video] The World of Nano – From HBM to zHBM: Rethinking Architecture Innovation

Advancing Memory Architecture for the AI Era – Up to 8x Performance Gains As AI computational demands continue to grow, data bottlenecks have become...

Memory Innovation Powering a New AI Infrastructure Cycle Part 2

Samsung Memory Solutions Connecting the Future of Edge AI In Part 1, we explored how the expansion of edge AI is making capacity, bandwidth, and energy...

Memory Innovation Powering a New AI Infrastructure Cycle Part 1

Edge AI Moves Closer—and Memory Matters More Than Ever Today, AI is rapidly expanding beyond large-scale data centers into smartphones, AI PCs, vehicles,...

[FMS 2026 3D & NAND Innovation Award] V10 BV-NAND: Pushing the Boundaries of AI Storage Beyond 400 Layers

As AI continues to advance and the volume of data that needs to be processed grows exponentially, storage solutions are being called upon to deliver greater...

At the Center of Global Memory Standards | Interview with FMS 2026 Lifetime Achievement Award Recipient Mian Quddus

Mian Quddus, Vice President at Samsung Electronics’ Device Solutions America (DSA), received the Lifetime Achievement Award at FMS 2026. The award...