[Video] The World of Nano – V-NAND, Bonding V-NAND: Redefining Storage Architecture

From Storage to AI: NAND’s Evolution for Next-Generation Infrastructure

NAND flash has long been a foundational storage technology in devices from USB drives to SSDs. But in the AI era, its role is expanding as high-performance, high-capacity storage becomes increasingly important to overall system efficiency.

Modern AI systems use Key-Value (KV) cache to store intermediate computation results, allowing models to reuse previous context without repeatedly performing the same computations from scratch. As AI models grow larger, they need far more cached data than DRAM alone can provide. NAND must supplement memory capacity while simultaneously achieving higher density, faster speed, and lower power consumption—an increasingly difficult challenge as layers stack higher.

The Evolution: Planar to Vertical

Planar NAND arranged cells in a flat pattern until scaling hit physical limits. Samsung’s V-NAND (2013) solved this by stacking cells vertically through channel holes—like elevator shafts through a building—connect the stacked cells, paving the way from 24 layers to hundreds of layers.

Bonding V-NAND & V10 addressed thermal and resistance challenges by fabricating Cell and Peri wafers separately, then bonding them vertically. With 3-Stack technology, V10 achieved 400+ layers—58% higher density, 45% faster writes, 33% faster I/O than V9.

Discover how NAND evolved from planar storage to AI infrastructure’s foundation.

From planar limitations to vertical innovation, each generation met its era’s demands. With V10, Samsung has broken through barriers that once seemed insurmountable.