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Samsung Develops First UFS 4.0 Storage Solution Compliant with New Industry Standard


Samsung Electronics has announced the development of its Universal Flash Storage (UFS) 4.0 solution, the first UFS 4.0 product compliant with the recently approved JEDEC® storage standard for next-gen mobile and computing systems. 

Samsung UFS 4.0 will provide speeds of up to 23.2 gigabits per second (Gbps) per lane. That’s double the previous leading UFS solution (UFS 3.1). This will make UFS 4.0 an excellent match for 5G smartphones with features requiring large amounts of data processing such as high-resolution images and high-capacity mobile game-playing, as well as for automotive and AR/VR applications.

With Samsung’s 7th-generation V-NAND and a proprietary controller, the newly developed Samsung UFS 4.0 will feature a sequential read speed of 4,200 megabytes per second (MB/s) and a sequential write speed of 2,800 MB/s, which will deliver approximately 2x and 1.6x faster speeds over the previous UFS 3.1 product, respectively.  

Power efficiency has been remarkably enhanced as well. Samsung’s new UFS 4.0 will deliver a sequential read speed of up to 6.0 MB/s per milliampere (mA), representing a 46-percent improvement over UFS 3.1. This will allow smartphones to be used longer at the same battery capacity. 

The Samsung UFS 4.0 will include an advanced Replay Protected Memory Block (RPMB). This design is 1.8 times more efficient in storing important personal data that can only be read or written through authenticated access.

Extremely small, this latest mobile storage solution will have a maximum size of 11mm x 13mm x 1mm.

Samsung will be mass producing its UFS 4.0 in Q3 of this year, in a variety of capacities up to 1TB.


1) Read and Write speed may vary depending on test environment.

2) Universal Flash Storage (UFS) version 4.0 devices are based on the JEDEC® standard specification.

3) UFS 4.0 references the MIPI® M-PHY v5.0 physical layer specification and the forthcoming MIPI® UniPro v2.0 transport layer specification.