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		<title>512GB eUFS 3.0 - 삼성전자 반도체 뉴스룸</title>
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            <title>512GB eUFS 3.0 - 삼성전자 반도체 뉴스룸</title>
            <link>https://news.samsungsemiconductor.com/kr</link>
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				<title>[카드뉴스] 삼성전자, 반도체 업체 최초 ‘친환경 우수성’ 국제 입증! 카본 트러스트 인증 획득한 &#8216;512GB eUFS 3.0&#8217;</title>
				<link>https://news.samsungsemiconductor.com/kr/%ec%b9%b4%eb%93%9c%eb%89%b4%ec%8a%a4-%ec%82%bc%ec%84%b1%ec%a0%84%ec%9e%90-%eb%b0%98%eb%8f%84%ec%b2%b4-%ec%97%85%ec%b2%b4-%ec%b5%9c%ec%b4%88-%ec%b9%9c%ed%99%98%ea%b2%bd-%ec%9a%b0%ec%88%98/?utm_source=rss&amp;utm_medium=direct</link>
				<pubDate>Tue, 03 Dec 2019 09:00:00 +0000</pubDate>
				<dc:creator><![CDATA[삼성전자 반도체]]></dc:creator>
						<category><![CDATA[ESG]]></category>
		<category><![CDATA[512GB eUFS 3.0]]></category>
		<category><![CDATA[삼성반도체]]></category>
		<category><![CDATA[삼성전자]]></category>
		<category><![CDATA[친환경 우수성인증]]></category>
		<category><![CDATA[카본 트러스트]]></category>
									<description><![CDATA[<p>삼성전자가 영국 정부가 설립한 친환경 제품 인증 비영리 기관 ‘카본 트러스트(The Carbon Trust)’로부터 &#8216;512GB eUFS 3.0&#8217; 제품이 반도체 업계 최초로 ‘친환경 우수성’을 인증 받았습니다. 특히 탄소 배출과 물 사용 절감 노력에 대해...</p>
<p>The post <a href="https://news.samsungsemiconductor.com/kr/%ec%b9%b4%eb%93%9c%eb%89%b4%ec%8a%a4-%ec%82%bc%ec%84%b1%ec%a0%84%ec%9e%90-%eb%b0%98%eb%8f%84%ec%b2%b4-%ec%97%85%ec%b2%b4-%ec%b5%9c%ec%b4%88-%ec%b9%9c%ed%99%98%ea%b2%bd-%ec%9a%b0%ec%88%98/">[카드뉴스] 삼성전자, 반도체 업체 최초 ‘친환경 우수성’ 국제 입증! 카본 트러스트 인증 획득한 ‘512GB eUFS 3.0’</a> first appeared on <a href="https://news.samsungsemiconductor.com/kr">삼성전자 반도체 뉴스룸</a>.</p>]]></description>
																<content:encoded><![CDATA[<p>삼성전자가 영국 정부가 설립한 친환경 제품 인증 비영리 기관 ‘카본 트러스트(The Carbon Trust)’로부터 &#8216;512GB eUFS 3.0&#8217; 제품이 반도체 업계 최초로 ‘친환경 우수성’을 인증 받았습니다. 특히 탄소 배출과 물 사용 절감 노력에 대해 &#8216;탄소 발자국&#8217;과 &#8216;물 발자국&#8217; 두 가지 인증을 동시에 획득하며 놀라움을 더했는데요.</p>



<p>지난 11월 26일 주한 영국대사관에서 열린 ‘제품 탄소발자국/환경성적표지인증 수여식(Ceremony of PCF/EPD Certification)’에서 반도체 업계 최초로 &#8216;친환경 우수성&#8217;을 인증 받던 순간과 카본 트러스트(The Carbon Trust) 인증에 대한 정보, 삼성전자의 친환경 반도체 제품들을 포토뉴스를 통해 확인해보세요!</p>



<div class="wp-block-image"><figure class="aligncenter size-full"><img fetchpriority="high" decoding="async" width="800" height="800" src="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_01.jpg" alt="512GB eUFS 3.0 1" class="wp-image-255" srcset="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_01.jpg 800w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_01-300x300.jpg 300w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_01-768x768.jpg 768w" sizes="(max-width: 800px) 100vw, 800px" /></figure></div>



<div class="wp-block-image"><figure class="aligncenter size-full"><img decoding="async" width="2048" height="2048" src="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_02.jpg" alt="512GB eUFS 3.0 2" class="wp-image-256" srcset="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_02.jpg 2048w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_02-300x300.jpg 300w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_02-1024x1024.jpg 1024w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_02-768x768.jpg 768w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_02-1536x1536.jpg 1536w" sizes="(max-width: 2048px) 100vw, 2048px" /></figure></div>



<div class="wp-block-image"><figure class="aligncenter size-full"><img decoding="async" width="800" height="800" src="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_03.jpg" alt="512GB eUFS 3.0 3" class="wp-image-257" srcset="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_03.jpg 800w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_03-300x300.jpg 300w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_03-768x768.jpg 768w" sizes="(max-width: 800px) 100vw, 800px" /></figure></div>



<div class="wp-block-image"><figure class="aligncenter size-full"><img loading="lazy" decoding="async" width="800" height="800" src="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_04.jpg" alt="512GB eUFS 3.0 4" class="wp-image-258" srcset="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_04.jpg 800w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_04-300x300.jpg 300w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_04-768x768.jpg 768w" sizes="auto, (max-width: 800px) 100vw, 800px" /></figure></div>



<div class="wp-block-image"><figure class="aligncenter size-full"><img loading="lazy" decoding="async" width="2048" height="2048" src="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_05.png" alt="" class="wp-image-259" srcset="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_05.png 2048w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_05-300x300.png 300w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_05-1024x1024.png 1024w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_05-768x768.png 768w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_05-1536x1536.png 1536w" sizes="auto, (max-width: 2048px) 100vw, 2048px" /></figure></div>



<div class="wp-block-image"><figure class="aligncenter size-full"><img loading="lazy" decoding="async" width="2048" height="2048" src="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_06.jpg" alt="512GB eUFS 3.0 6" class="wp-image-260" srcset="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_06.jpg 2048w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_06-300x300.jpg 300w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_06-1024x1024.jpg 1024w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_06-768x768.jpg 768w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_06-1536x1536.jpg 1536w" sizes="auto, (max-width: 2048px) 100vw, 2048px" /></figure></div>



<div class="wp-block-image"><figure class="aligncenter size-full"><img loading="lazy" decoding="async" width="2048" height="2048" src="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_07.jpg" alt="512GB eUFS 3.0 7" class="wp-image-261" srcset="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_07.jpg 2048w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_07-300x300.jpg 300w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_07-1024x1024.jpg 1024w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_07-768x768.jpg 768w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_07-1536x1536.jpg 1536w" sizes="auto, (max-width: 2048px) 100vw, 2048px" /></figure></div>



<div class="wp-block-image"><figure class="aligncenter size-full"><img loading="lazy" decoding="async" width="2048" height="2048" src="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_08.jpg" alt="512GB eUFS 3.0 8" class="wp-image-262" srcset="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_08.jpg 2048w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_08-300x300.jpg 300w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_08-1024x1024.jpg 1024w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_08-768x768.jpg 768w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_08-1536x1536.jpg 1536w" sizes="auto, (max-width: 2048px) 100vw, 2048px" /></figure></div>



<div class="wp-block-image"><figure class="aligncenter size-full"><img loading="lazy" decoding="async" width="2048" height="2048" src="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_09.jpg" alt="512GB eUFS 3.0 9" class="wp-image-263" srcset="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_09.jpg 2048w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_09-300x300.jpg 300w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_09-1024x1024.jpg 1024w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_09-768x768.jpg 768w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512gbeufs30_photh_191203_09-1536x1536.jpg 1536w" sizes="auto, (max-width: 2048px) 100vw, 2048px" /></figure></div><p>The post <a href="https://news.samsungsemiconductor.com/kr/%ec%b9%b4%eb%93%9c%eb%89%b4%ec%8a%a4-%ec%82%bc%ec%84%b1%ec%a0%84%ec%9e%90-%eb%b0%98%eb%8f%84%ec%b2%b4-%ec%97%85%ec%b2%b4-%ec%b5%9c%ec%b4%88-%ec%b9%9c%ed%99%98%ea%b2%bd-%ec%9a%b0%ec%88%98/">[카드뉴스] 삼성전자, 반도체 업체 최초 ‘친환경 우수성’ 국제 입증! 카본 트러스트 인증 획득한 ‘512GB eUFS 3.0’</a> first appeared on <a href="https://news.samsungsemiconductor.com/kr">삼성전자 반도체 뉴스룸</a>.</p>]]></content:encoded>
																				</item>
					<item>
				<title>삼성전자, 세계 최초 &#8216;512GB eUFS 3.0&#8217; 양산</title>
				<link>https://news.samsungsemiconductor.com/kr/%ec%82%bc%ec%84%b1%ec%a0%84%ec%9e%90-%ec%84%b8%ea%b3%84-%ec%b5%9c%ec%b4%88-512gb-eufs-3-0-%ec%96%91%ec%82%b0/?utm_source=rss&amp;utm_medium=direct</link>
				<pubDate>Wed, 27 Feb 2019 09:00:00 +0000</pubDate>
				<dc:creator><![CDATA[삼성전자 반도체]]></dc:creator>
						<category><![CDATA[보도자료]]></category>
		<category><![CDATA[프레스센터]]></category>
		<category><![CDATA[512GB eUFS 3.0]]></category>
		<category><![CDATA[뉴스]]></category>
		<category><![CDATA[삼성반도체]]></category>
		<category><![CDATA[삼성전자]]></category>
		<category><![CDATA[스마트폰 메모리]]></category>
									<description><![CDATA[<p>삼성전자가 역대 최고 속도의 차세대 모바일 메모리 &#8216;512GB eUFS 3.0(embedded Universal Flash Storage 3.0)&#8217;을 양산하며 차세대 플래그십 스마트폰 메모리 시장 선점에 나섰습니다. &#8216;5세대 V낸드&#8217;...</p>
<p>The post <a href="https://news.samsungsemiconductor.com/kr/%ec%82%bc%ec%84%b1%ec%a0%84%ec%9e%90-%ec%84%b8%ea%b3%84-%ec%b5%9c%ec%b4%88-512gb-eufs-3-0-%ec%96%91%ec%82%b0/">삼성전자, 세계 최초 ‘512GB eUFS 3.0’ 양산</a> first appeared on <a href="https://news.samsungsemiconductor.com/kr">삼성전자 반도체 뉴스룸</a>.</p>]]></description>
																<content:encoded><![CDATA[<p>삼성전자가 역대 최고 속도의 차세대 모바일 메모리 &#8216;512GB eUFS 3.0(embedded Universal Flash Storage 3.0)&#8217;을 양산하며 차세대 플래그십 스마트폰 메모리 시장 선점에 나섰습니다.</p>



<div class="wp-block-image"><figure class="aligncenter size-full"><img loading="lazy" decoding="async" width="800" height="480" src="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512geufs30_press_190227_01-1.jpg" alt="▲ 삼성전자가 세계 최초로 양산한 512GB eUFS 3.0" class="wp-image-3148" srcset="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512geufs30_press_190227_01-1.jpg 800w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512geufs30_press_190227_01-1-300x180.jpg 300w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512geufs30_press_190227_01-1-248x150.jpg 248w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512geufs30_press_190227_01-1-768x461.jpg 768w" sizes="auto, (max-width: 800px) 100vw, 800px" /><figcaption>▲ 삼성전자가 세계 최초로 양산한 512GB eUFS 3.0</figcaption></figure></div>



<h2 class="wp-block-heading">&#8216;5세대 V낸드&#8217; 기반 최고 성능 eUFS 3.0 라인업 공급 시작</h2>



<p>&#8216;eUFS 3.0&#8217; 제품은 기존 &#8216;eUFS 2.1&#8217; 보다 2배 이상 빠른 2,100MB/s의 연속읽기 속도를 구현합니다.</p>



<p>이는 SATA SSD보다 약 4배, 마이크로SD 카드보다는 20배 이상 빠른 속도로, 모바일 기기에 저장한 데이터를 PC(eUFS 3.0 → NVMe SSD 기준)로 전송 시 Full HD급 영화 1편(3.7GB)을 3초 안에 보낼 수 있습니다.</p>



<p>초고속 &#8216;NVMe SSD&#8217; 수준의 성능을 가진 이 제품으로 소비자들은 초고해상도의 차세대 모바일 기기에서도 울트라 슬림 노트북 수준의 성능을 체감할 수 있게 됐습니다.</p>



<div class="wp-block-image"><figure class="aligncenter size-full"><img loading="lazy" decoding="async" width="800" height="480" src="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512geufs30_press_190227_02.jpg" alt="▲ 삼성전자가 세계 최초로 양산한 512GB eUFS 3.0" class="wp-image-3149" srcset="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512geufs30_press_190227_02.jpg 800w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512geufs30_press_190227_02-300x180.jpg 300w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512geufs30_press_190227_02-248x150.jpg 248w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512geufs30_press_190227_02-768x461.jpg 768w" sizes="auto, (max-width: 800px) 100vw, 800px" /><figcaption>▲ 삼성전자가 세계 최초로 양산한 512GB eUFS 3.0</figcaption></figure></div>



<p>삼성전자는 이번 제품에 5세대 512Gb V낸드를 8단으로 적층하고 고성능 컨트롤러를 탑재해 이 같은 성능을 구현했습니다.</p>



<p>또한 연속쓰기 속도도 410MB/s로 기존 eUFS 2.1 제품보다 1.5배 이상 높였고, 임의 읽기·쓰기 속도도 최대 1.3배 빠른 63,000·68,000 IOPS(Input/Output Operations Per Second)를 구현했습니다.</p>



<p>특히 임의읽기·쓰기 속도는 마이크로SD 카드(100 IOPS)보다 630배 이상 향상돼 대화면의 초고해상도 디스플레이에서 다양하고 복잡한 작업을 동시에 실행하더라도 빠르고 원활하게 처리할 수 있습니다.</p>



<div class="wp-block-image"><figure class="aligncenter size-full"><img loading="lazy" decoding="async" width="800" height="480" src="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512geufs30_press_190227_03.jpg" alt="▲ 삼성전자가 세계 최초로 양산한 512GB eUFS 3.0" class="wp-image-3150" srcset="https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512geufs30_press_190227_03.jpg 800w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512geufs30_press_190227_03-300x180.jpg 300w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512geufs30_press_190227_03-248x150.jpg 248w, https://news.samsungsemiconductor.com/kr/wp-content/uploads/2021/05/512geufs30_press_190227_03-768x461.jpg 768w" sizes="auto, (max-width: 800px) 100vw, 800px" /></figure></div>



<p>삼성전자 메모리사업부 전략마케팅팀 최철 부사장은 &#8220;eUFS 3.0 제품을 본격 양산함으로써 소비자들이 모바일 기기에서도 최고급 노트북 수준의 사용 편의성과 만족감을 체감할 수 있게 되었다&#8221;라며, &#8220;올해 1TB까지 라인업을 늘려 글로벌 모바일 제조사들이 프리미엄 시장에서 새로운 성장 분야로 도약하는 데 기여해 나갈 것&#8221;이라고 밝혔습니다.</p>



<h2 class="wp-block-heading">용량별 라인업 확대, 프리미엄 메모리 시장 성장 견인</h2>



<p>삼성전자는 이달 512GB, 128GB eUFS 3.0 제품 공급을 시작으로 하반기에는 1TB, 256GB 용량도 제공해 글로벌 IT 고객들의 선택의 폭을 넓히고, 차세대 모바일 기기를 적기에 출시할 수 있도록 적극 지원할 계획입니다.</p>



<p>삼성전자는 2015년 기존 &#8216;eMMC(embedded MultiMediaCard)&#8217; 대비 1.4배 이상 빠른 모바일 내장 메모리 &#8216;eUFS 2.0&#8217;을 양산하며 UFS 시장을 창출했으며, 2017년 &#8216;eUFS 2.1&#8217;에 이어 올해 &#8216;eUFS 3.0&#8217; 시대를 열었습니다.</p>



<h2 class="wp-block-heading"><strong>[참고] 내장형 메모리 성능 비교</strong></h2>



<figure class="wp-block-table"><table><thead><tr><th class="has-text-align-center" data-align="center"><strong>구분</strong></th><th class="has-text-align-center" data-align="center"><strong>연속읽기속도</strong></th><th class="has-text-align-center" data-align="center"><strong>연속쓰기속도</strong></th><th class="has-text-align-center" data-align="center"><strong>&nbsp;임의읽기속도</strong></th><th class="has-text-align-center" data-align="center"><strong>임의쓰기속도</strong></th></tr></thead><tbody><tr><td class="has-text-align-center" data-align="center"><strong>&nbsp;512GB eUFS 3.0</strong><br>(2019.2월)</td><td class="has-text-align-center" data-align="center">&nbsp;<strong>2100MB/s</strong>(x2.10)</td><td class="has-text-align-center" data-align="center"><strong>&nbsp;410MB/s</strong>(x1.58)</td><td class="has-text-align-center" data-align="center"><strong>63,000 IOPS</strong>(x1.09)&nbsp;</td><td class="has-text-align-center" data-align="center"><strong>68,000 IOPS</strong>&nbsp;(x1.36)&nbsp;</td></tr><tr><td class="has-text-align-center" data-align="center">1TB eUFS 2.1(2019.01월)</td><td class="has-text-align-center" data-align="center">1000MB/s<br>(x1.16)</td><td class="has-text-align-center" data-align="center">260MB/s&nbsp;(x1.02)</td><td class="has-text-align-center" data-align="center">58,000 IOPS(x1.38)</td><td class="has-text-align-center" data-align="center">50,000 IOPS&nbsp;&nbsp;(x1.25)</td></tr><tr><td class="has-text-align-center" data-align="center">512GB eUFS 2.1(2017.11월)</td><td class="has-text-align-center" data-align="center">860MB/s</td><td class="has-text-align-center" data-align="center">255MB/s</td><td class="has-text-align-center" data-align="center">42,000 IOPS</td><td class="has-text-align-center" data-align="center">40,000 IOPS</td></tr><tr><td class="has-text-align-center" data-align="center">자동차용eUFS 2.1 (2017.9월)</td><td class="has-text-align-center" data-align="center">850MB/s&nbsp;</td><td class="has-text-align-center" data-align="center">150MB/s</td><td class="has-text-align-center" data-align="center">45,000 IOPS</td><td class="has-text-align-center" data-align="center">32,000 IOPS</td></tr><tr><td class="has-text-align-center" data-align="center">256GB UFS Card(2016.7월)</td><td class="has-text-align-center" data-align="center">530MB/s</td><td class="has-text-align-center" data-align="center">170MB/s</td><td class="has-text-align-center" data-align="center">40,000 IOPS</td><td class="has-text-align-center" data-align="center">35,000 IOPS</td></tr><tr><td class="has-text-align-center" data-align="center">256GB eUFS 2.0(2016.2월)</td><td class="has-text-align-center" data-align="center">850MB/s&nbsp;</td><td class="has-text-align-center" data-align="center">260MB/s</td><td class="has-text-align-center" data-align="center">45,000 IOPS</td><td class="has-text-align-center" data-align="center">40,000 IOPS</td></tr><tr><td class="has-text-align-center" data-align="center">128GB eUFS 2.0(2015.1월)</td><td class="has-text-align-center" data-align="center">350MB/s&nbsp;</td><td class="has-text-align-center" data-align="center">150MB/s</td><td class="has-text-align-center" data-align="center">19,000 IOPS</td><td class="has-text-align-center" data-align="center">14,000 IOPS</td></tr><tr><td class="has-text-align-center" data-align="center">eMMC 5.1&nbsp;</td><td class="has-text-align-center" data-align="center">250MB/s&nbsp;</td><td class="has-text-align-center" data-align="center">125MB/s&nbsp;</td><td class="has-text-align-center" data-align="center">11,000 IOPS&nbsp;</td><td class="has-text-align-center" data-align="center">13,000 IOPS</td></tr><tr><td class="has-text-align-center" data-align="center">eMMC 5.0&nbsp;</td><td class="has-text-align-center" data-align="center">250MB/s</td><td class="has-text-align-center" data-align="center">90MB/s&nbsp;</td><td class="has-text-align-center" data-align="center">7,000 IOPS&nbsp;</td><td class="has-text-align-center" data-align="center">13,000 IOPS</td></tr><tr><td class="has-text-align-center" data-align="center">eMMC 4.5</td><td class="has-text-align-center" data-align="center">140MB/s</td><td class="has-text-align-center" data-align="center">50MB/s&nbsp;</td><td class="has-text-align-center" data-align="center">7,000 IOPS</td><td class="has-text-align-center" data-align="center">2,000 IOPS</td></tr></tbody></table></figure><p>The post <a href="https://news.samsungsemiconductor.com/kr/%ec%82%bc%ec%84%b1%ec%a0%84%ec%9e%90-%ec%84%b8%ea%b3%84-%ec%b5%9c%ec%b4%88-512gb-eufs-3-0-%ec%96%91%ec%82%b0/">삼성전자, 세계 최초 ‘512GB eUFS 3.0’ 양산</a> first appeared on <a href="https://news.samsungsemiconductor.com/kr">삼성전자 반도체 뉴스룸</a>.</p>]]></content:encoded>
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