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		<title>V-NAND &#8211; Samsung Semiconductor Global Newsroom</title>
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            <title>V-NAND &#8211; Samsung Semiconductor Global Newsroom</title>
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		<description>What's New on Samsung Semiconductor Newsroom</description>
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				<title>Samsung Begins Industry&#8217;s First Mass Production of  QLC 9th-Gen V-NAND for AI Era </title>
				<link>https://news.samsungsemiconductor.com/global/samsung-begins-industrys-first-mass-production-of-qlc-9th-gen-v-nand-for-ai-era/?utm_source=rss&amp;utm_medium=direct</link>
				<pubDate>Thu, 12 Sep 2024 08:00:08 +0000</pubDate>
				<dc:creator><![CDATA[rosa lee]]></dc:creator>
						<category><![CDATA[Press Release]]></category>
		<category><![CDATA[Channel Hole Etching]]></category>
		<category><![CDATA[Designed Mold]]></category>
		<category><![CDATA[double stack]]></category>
		<category><![CDATA[NAND flash]]></category>
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		<category><![CDATA[QLC]]></category>
		<category><![CDATA[QLC 9th-Gen V-NAND]]></category>
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									<description><![CDATA[Latest QLC V-NAND combines several breakthrough technologies, including Channel Hole Etching that enables the highest layer count in the industry with...]]></description>
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				<title>Samsung Electronics Launches Enhanced 1TB microSD Cards With Improved Performance and Higher Capacity</title>
				<link>https://news.samsungsemiconductor.com/global/samsung-electronics-launches-enhanced-1tb-microsd-cards-with-improved-performance-and-higher-capacity/?utm_source=rss&amp;utm_medium=direct</link>
				<pubDate>Wed, 31 Jul 2024 22:59:00 +0000</pubDate>
				<dc:creator><![CDATA[지향 류]]></dc:creator>
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									<description><![CDATA[microSD cards PRO Plus and EVO Plus adopts Samsung’s advanced V-NAND technology to capture and store everyday moments safely and reliably Boosted...]]></description>
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				<title>Samsung V-NAND : A Landmark of the Hyperscale AI Era</title>
				<link>https://news.samsungsemiconductor.com/global/samsung-v-nand-a-landmark-of-the-hyperscale-ai-era/?utm_source=rss&amp;utm_medium=direct</link>
				<pubDate>Fri, 05 Jul 2024 10:26:18 +0000</pubDate>
				<dc:creator><![CDATA[지향 류]]></dc:creator>
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		<category><![CDATA[Technology]]></category>
		<category><![CDATA[3D V-nand]]></category>
		<category><![CDATA[9th Gen V-NAND]]></category>
		<category><![CDATA[Channel hole etch]]></category>
		<category><![CDATA[Contact etch]]></category>
		<category><![CDATA[CTF Structure]]></category>
		<category><![CDATA[Dummy channel holes]]></category>
		<category><![CDATA[Floating gate]]></category>
		<category><![CDATA[HARC]]></category>
		<category><![CDATA[High-K Metal Gate]]></category>
		<category><![CDATA[interview]]></category>
		<category><![CDATA[multi-bonding]]></category>
		<category><![CDATA[QLC]]></category>
		<category><![CDATA[TCMC]]></category>
		<category><![CDATA[TLC]]></category>
		<category><![CDATA[V-NAND]]></category>
									<description><![CDATA[Samsung solidified its leadership in the NAND flash market by commencing production of the industry&#8217;s first “1Tb (terabit) TLC (Triple Level Cell)*...]]></description>
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				<title>Samsung Electronics Begins Industry&#8217;s First Mass Production of 9th-Gen V-NAND</title>
				<link>https://news.samsungsemiconductor.com/global/samsung-electronics-begins-industrys-first-mass-production-of-9th-gen-v-nand/?utm_source=rss&amp;utm_medium=direct</link>
				<pubDate>Tue, 23 Apr 2024 11:00:04 +0000</pubDate>
				<dc:creator><![CDATA[현송 이]]></dc:creator>
						<category><![CDATA[Press Release]]></category>
		<category><![CDATA[9th-Gen V-NAND]]></category>
		<category><![CDATA[NAND flash]]></category>
		<category><![CDATA[PCIe 5.0]]></category>
		<category><![CDATA[Samsung]]></category>
		<category><![CDATA[Samsung Electronics]]></category>
		<category><![CDATA[samsung memory]]></category>
		<category><![CDATA[TLC 9th-generation V-NAND]]></category>
		<category><![CDATA[V-NAND]]></category>
		<category><![CDATA[Vertical NAND]]></category>
									<description><![CDATA[Industry-leading bit density with about 50% increase compared to previous generation Productivity for the V-NAND’s groundbreaking double-stack structure...]]></description>
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				<title>Samsung’s New microSD Cards Bring High Performance and Capacity for the New Era in Mobile Computing and On-device AI</title>
				<link>https://news.samsungsemiconductor.com/global/samsungs-new-microsd-cards-bring-high-performance-and-capacity-for-the-new-era-in-mobile-computing-and-on-device-ai/?utm_source=rss&amp;utm_medium=direct</link>
				<pubDate>Wed, 28 Feb 2024 11:00:06 +0000</pubDate>
				<dc:creator><![CDATA[현송 이]]></dc:creator>
						<category><![CDATA[Press Release]]></category>
		<category><![CDATA[DTG]]></category>
		<category><![CDATA[Dynamic Thermal Guard]]></category>
		<category><![CDATA[MicroSD Card]]></category>
		<category><![CDATA[Samsung]]></category>
		<category><![CDATA[Samsung Electronics]]></category>
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		<category><![CDATA[samsung semiconductor newsroom]]></category>
		<category><![CDATA[SD Express interface]]></category>
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									<description><![CDATA[Samsung samples industry-first 256GB SD Express microSD card boasting speeds more than four times faster than current interface Samsung’s 1TB UHS-1 microSD...]]></description>
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