<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet title="XSL_formatting" type="text/xsl" href="https://news.samsungsemiconductor.com/global/wp-content/plugins/btr_rss/btr_rss.xsl"?><rss version="2.0"
     xmlns:content="http://purl.org/rss/1.0/modules/content/"
     xmlns:wfw="http://wellformedweb.org/CommentAPI/"
     xmlns:dc="http://purl.org/dc/elements/1.1/"
     xmlns:atom="http://www.w3.org/2005/Atom"
     xmlns:sy="http://purl.org/rss/1.0/modules/syndication/"
     xmlns:slash="http://purl.org/rss/1.0/modules/slash/"
	>
	<channel>
		<title>CTF Structure &#8211; Samsung Semiconductor Global Newsroom</title>
		<atom:link href="https://news.samsungsemiconductor.com/global/tag/ctf-structure/feed/" rel="self" type="application/rss+xml" />
		<link>https://news.samsungsemiconductor.com/global</link>
        <image>
            <url>https://news.samsungsemiconductor.com/global/wp-content/themes/newsroom/assets/images/logos.svg</url>
            <title>CTF Structure &#8211; Samsung Semiconductor Global Newsroom</title>
            <link>https://news.samsungsemiconductor.com/global</link>
        </image>
        <currentYear>2024</currentYear>
        <cssFile>https://news.samsungsemiconductor.com/global/wp-content/plugins/btr_rss/btr_rss_xsl.css</cssFile>
        <logo>https://news.samsungsemiconductor.com/global/wp-content/themes/newsroom/assets/images/logos.svg</logo>
		<description>What's New on Samsung Semiconductor Newsroom</description>
		<lastBuildDate>Tue, 07 Apr 2026 08:14:38 +0000</lastBuildDate>
		<language>en-US</language>
		<sy:updatePeriod>hourly</sy:updatePeriod>
		<sy:updateFrequency>1</sy:updateFrequency>
					<item>
				<title>Samsung V-NAND : A Landmark of the Hyperscale AI Era</title>
				<link>https://news.samsungsemiconductor.com/global/samsung-v-nand-a-landmark-of-the-hyperscale-ai-era/?utm_source=rss&amp;utm_medium=direct</link>
				<pubDate>Fri, 05 Jul 2024 10:26:18 +0000</pubDate>
				<dc:creator><![CDATA[지향 류]]></dc:creator>
						<category><![CDATA[Featured Stories]]></category>
		<category><![CDATA[Technology]]></category>
		<category><![CDATA[3D V-nand]]></category>
		<category><![CDATA[9th Gen V-NAND]]></category>
		<category><![CDATA[Channel hole etch]]></category>
		<category><![CDATA[Contact etch]]></category>
		<category><![CDATA[CTF Structure]]></category>
		<category><![CDATA[Dummy channel holes]]></category>
		<category><![CDATA[Floating gate]]></category>
		<category><![CDATA[HARC]]></category>
		<category><![CDATA[High-K Metal Gate]]></category>
		<category><![CDATA[interview]]></category>
		<category><![CDATA[multi-bonding]]></category>
		<category><![CDATA[QLC]]></category>
		<category><![CDATA[TCMC]]></category>
		<category><![CDATA[TLC]]></category>
		<category><![CDATA[V-NAND]]></category>
									<description><![CDATA[Samsung solidified its leadership in the NAND flash market by commencing production of the industry&#8217;s first “1Tb (terabit) TLC (Triple Level Cell)*...]]></description>
															</item>
			</channel>
</rss>